Actual defect observation results of an extreme-ultraviolet blank mask by coherent diffraction imaging
Actual defect observation results of an extreme-ultraviolet blank mask by coherent diffraction imaging
复制标题
DOI：
10.7567/apex.9.035202
复制
发表时间：
2016-03-01
影响因子：
2.3
通讯作者：
Watanabe, Takeo
中科院分区：
文献类型：
--
作者：
Harada, Tetsuo;Hashimoto, Hiraku;Watanabe, Takeo
极紫外(EUV)光刻技术带来了许多挑战，其中之一就是生产无缺陷掩模。为了在定量的相位图像中观察EUV掩模上的缺陷，我们研制了一台微相干EUV散射显微镜。利用层析成像技术重建缺陷的强度和位相图像。我们使用显微镜观察了EUV空白掩模上的四个实际缺陷。实际缺陷的重建形状与原子力显微镜(AFM)测量的形状一致。因此，我们的显微镜应该作为表征缺陷的必要审查工具。(C)2016日本应用物理学会
Extreme-ultraviolet (EUV) lithography poses a number of challenges, one of which is the production of a defect-free mask. To observe the defects on an EUV mask in a quantitative phase image, we have developed a microcoherent EUV scatterometry microscope. The intensity and phase images of the defects are reconstructed using ptychography. We observe four actual defects on an EUV blank mask using the microscope. The reconstructed shapes of the actual defects correspond well to those measured by atomic force microscopy (AFM). Our microscope should therefore function as an essential review tool in characterizing defects. (C) 2016 The Japan Society of Applied Physics