Effects of doping in Kondo insulators (invited)
Effects of doping in Kondo insulators (invited)
复制标题
近藤绝缘体中掺杂的影响（特邀）
DOI：
10.1063/1.356720
复制
发表时间：
1994
影响因子：
3.2
通讯作者：
P. Schlottmann
中科院分区：
文献类型：
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作者：
P. Schlottmann
近藤绝缘体如Ce3Bi4Pt3和CeNiSn是具有小带隙半导体特性的化合物。非磁性杂质，即所谓的近藤空穴，破坏了平移不变性，从而破坏了基态的相干性。杂质态可以通过（i）取代稀土（锕系元素）离子或（ii）取代（或添加、去除）一个配体原子来引入。孤立的杂质通常在差距中产生束缚态。根据杂质的性质（电荷中性或掺杂），费米能级被杂质能级钉扎或位于差距中。在前一种情况下，Kondo孔具有磁性（居里磁化率和比热的肖特基异常），而在后一种情况下，这些性质是不稳定的。对于有限浓度的Kondo空穴，情况（i）和（ii）是定性不同的。在（i）中，它在半导体的差距内产生杂质带。f电子态密度中杂质带的高度和宽度.
Kondo insulators like Ce3Bi4Pt3 and CeNiSn are compounds with small‐gap semiconductor properties. Nonmagnetic impurities, so‐called Kondo holes, break the translational invariance and hence the coherence of the ground state. Impurity states can be introduced by (i) substituting the rare earth (actinide) ion or (ii) by replacing (or adding, removing) one of the ligand atoms. Isolated impurities usually give rise to bound states in the gap. Depending on the nature of the impurity (charge neutral or a dopand) the Fermi level is pinned by the impurity level or lies in the gap. In the former case the Kondo hole has magnetic properties (Curie susceptibility and Schottky anomaly in the specific heat), while in the latter situation the properties are nonmagnetic. For a finite concentration of Kondo holes the situations (i) and (ii) are qualitatively different. In (i) it gives rise to an impurity band inside the gap of the semiconductor. The height and width of the impurity band in the f‐electron density of states...