Deuterium interaction with impurities in tungsten studied with TDS
Deuterium interaction with impurities in tungsten studied with TDS
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DOI：
10.1016/s0022-3115(09)80082-2
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发表时间：
1992-09
影响因子：
3.1
通讯作者：
H. Eleveld;A. Veen
中科院分区：
文献类型：
--
作者：
H. Eleveld;A. Veen
用热脱附光谱法（TDS）研究了氘钨体系。通过气体暴露和离子注入引入杂质（氧和氦）。俄歇电子能谱用于监测表面覆盖的杂质。氘从亚表面缺陷中的释放，包括表面复合到D2已经被模拟。结果表明，对于氘解离的能量密度低于1.3 eV的表面复合是速率决定步骤。通过对实验数据的拟合，得到氘空位的离解焓为1.43 ± 0.02 eV，尝试频率为1 × 1013s− 1。虽然表面的氧和氮覆盖抑制了真空中氘的表面俘获，但没有发现表面释放氘的氧诱导焓垒。从单空位到氦泡的离子诱导缺陷引起氘的脱陷，其活化能从1.2到1.8 eV不等。
The deuterium-tungsten system was studied using thermal desorption spectrometry (TDS). Impurities (oxygen and helium) were introduced by gas exposure and ion implantation. Auger electron spectroscopy was used to monitor surface coverage with impurities. The release of deuterium from subsurface defects including surface recombination to D2has been módelled. It was shown that for deuterium dissociation enthalpies lower than 1.3 eV surface recombination is the rate determining step. By fitting of the experimental data a deuterium vacancy dissociation enthalpy of 1.43 ± 0.02 eV and an attempt frequency of 1 × 1013s−1was found. Though oxygen and nitrogen coverage of the surface inhibited surface trapping of deuterium from the vacuum no indication was found of an oxygen induced enthalpy barrier for deuterium detrapping from the surface. Ion induced defects varying from monovacancies to helium bubbles give rise to deuterium detrapping with activation enthalpies varying from 1.2 to 1.8 eV.