High‐Temperature Passive Oxidation of Chemically Vapor Deposited Silicon Carbide
High‐Temperature Passive Oxidation of Chemically Vapor Deposited Silicon Carbide
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DOI：
10.1111/j.1151-2916.1989.tb07658.x
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发表时间：
1989-08
影响因子：
3.9
通讯作者：
T. Narushima;T. Goto;T. Hirai
中科院分区：
文献类型：
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作者：
T. Narushima;T. Goto;T. Hirai
采用热重分析技术研究了化学气相沉积（CVD）SiC在1823 ~ 1948 K温度范围内的高温氧化行为。使用SiCl 4、C3 H8和H2作为源气体，通过化学气相沉积制备样品。CVD-SiC的氧化行为表明，在整个温度范围内的“被动”氧化和两步抛物线氧化动力学。形成的SiO2膜的结晶可能导致了这种两步抛物线行为。抛物线氧化速率常数（Kp）随氧分压（P1/2 O2）的平方根变化。氧化反应的活化能分别为345和387 kJ · mol−1。这些值表明，通过SiO2膜的氧离子的扩散过程是速率控制的。
The oxidation behavior of chemically vapor deposited (CVD) SiC at high temperature was investigated using a thermogravimetric technique in the temperatures range of 1823 to 1948 K. The specimens were prepared by chemical vapor deposition using SiCl4, C3H8, and H2 as source gases. The oxidation behavior of the CVD-SiC indicated “passive” oxidation and a two-step parabolic oxidation kinetics over the entire temperature range. The crystallization of the SiO2 film formed may have caused this two-step parabolic behavior. The parabolic oxidation rate constant (Kp) varied with the square root of the oxygen partial pressure (P1/2O2). The activation energy for the oxidation was determined to be 345 and 387 kJ · mol−1. These values suggest that the diffusion process of the oxygen ion which passes through the SiO2 film is rate-controlling.