Effect of gamma irradiation on leakage current in CMOS read-out chips for the ATLAS upgrade silicon strip tracker at the HL-LHC
Effect of gamma irradiation on leakage current in CMOS read-out chips for the ATLAS upgrade silicon strip tracker at the HL-LHC
复制标题
伽马辐照对 HL-LHC ATLAS 升级硅带跟踪器 CMOS 读出芯片漏电流的影响
DOI：
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发表时间：
2018
期刊：
影响因子：
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通讯作者：
A. Tricoli
中科院分区：
文献类型：
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作者：
S. Stucci;D. Lynn;P. Kuczewski;Russel Burns;G. Nieuwenhuizen;G. Rosin;J. Kierstead;A. Tricoli
在某些130 nm CMOS技术中，在暴露于电离辐射期间，探测器读出芯片中NMOS晶体管的漏电流的增加需要在探测器系统的设计中特别考虑，因为这可能导致电源电流和功耗的大幅增加。作为欧洲核子研究中心（CERN）大型强子对撞机（LHC）高亮度升级的ATLAS内部探测器跟踪器升级研发计划的一部分，布鲁克海文国家实验室（Brookhaven National Laboratory）用价值60美元的钴伽马射线源进行了一系列专门的辐照。测量将提出，抑制在130 nm技术的ABC 130读出芯片的数字漏电流的增加。电流的变化作为时间和总电离剂量的函数已被研究在各种条件下的剂量率，温度和功率施加到芯片。剂量率和温度的变化范围被设定为接近于高亮度LHC的预期值，即在0.6 krad h$^{−1}$ - 2.5 krad h $^{−1}$和-10 ℃至+ 10 ℃之间。在卢瑟福·阿普尔顿实验室，两个测试中的芯片被高剂量的X射线预辐照。结果表明，泄漏电流的依赖性与正在研究的参数，并提供有价值的信息，为理解的基本机制负责在晶体管和探测器读出芯片的辐射损伤。
The increase of the leakage current of NMOS transistors in detector readout chips in certain 130 nm CMOS technologies during exposure to ionising radiation needs special consideration in the design of detector systems, as this can result in a large increase of the supply current and power dissipation. As part of the R&D program for the upgrade of the ATLAS inner detector tracker for the High Luminosity upgrade of the LHC at CERN, a dedicated set of irradiations have been carried out with the $^60$Co gamma-ray source at the Brookhaven National Laboratory. Measurements will be presented that characterise the increase in the digital leakage current in the 130 nm-technology ABC130 readout chips. The variation of the current as a function of time and total ionising dose has been studied under various conditions of dose rate, temperature and power applied to the chip. The range of variation of dose rates and temperatures has been set to be close to those expected at the High Luminosity LHC, i.e. in the range 0.6 krad h$^{−1}$ - 2.5 krad h $^{−1}$ and between -10 ℃ and + 10 ℃. Two of the chips under test were pre-irradiated with high doses of X-rays at Rutherford Appleton Laboratory. The results show the dependence of the leakage current with the parameters under study and provide valuable information for the understanding of the underlying mechanisms responsible for radiation damage in transistors and detector readout chips.