Orbital magnetization in semiconductors
Orbital magnetization in semiconductors
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DOI：
10.1088/1674-1056/18/12/050
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发表时间：
2009-12
影响因子：
1.7
通讯作者：
Fang Cheng;Wang Zhi-gang;Li Shu-shen;Zhang Ping
中科院分区：
文献类型：
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作者：
Fang Cheng;Wang Zhi-gang;Li Shu-shen;Zhang Ping
本文从理论上研究了电子掺杂（n型）半导体异质结构和空穴掺杂（p型）体半导体的轨道磁化强度，它们分别由包含Rashba自旋轨道耦合和塞曼分裂项的二维电子/空穴哈密顿量描述。这是塞曼分裂，而不是Rashba自旋轨道耦合，破坏了半导体系统的时间反演对称性，并导致在非平凡的轨道磁化。结果表明，在p型体半导体中，每个空穴的轨道磁化强度和霍尔电导的大小分别约为10−2-10−1有效玻尔磁子和10−1-1 e2/h。然而，在n型半导体异质结构中，每个电子的轨道磁化强度和霍尔电导太小，在实验中不易观察到。
This paper theoretically investigates the orbital magnetization of electron-doped (n-type) semiconductor heterostructures and of hole-doped (p-type) bulk semiconductors, which are respectively described by a two-dimensional electron/hole Hamiltonian with both the included Rashba spin–orbit coupling and Zeeman splitting terms. It is the Zeeman splitting, rather than the Rashba spin–orbit coupling, that destroys the time-reversal symmetry of the semiconductor systems and results in nontrivial orbital magnetization. The results show that the magnitude of the orbital magnetization per hole and the Hall conductance in the p-type bulk semiconductors are about 10−2–10−1 effective Bohr magneton and 10−1–1 e2/h, respectively. However, the orbital magnetization per electron and the Hall conductance in the n-type semiconductor heterostructures are too small to be easily observed in experiment.