Thermodynamic study of c-axis-oriented epitaxial Pb(Zr,Ti)O 3 thin films
Thermodynamic study of c-axis-oriented epitaxial Pb(Zr,Ti)O 3 thin films
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DOI：
10.1103/physrevb.69.064103
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发表时间：
2004-02
影响因子：
3.7
通讯作者：
I. Kanno;Y. Yokoyama;H. Kotera;K. Wasa
中科院分区：
文献类型：
--
作者：
I. Kanno;Y. Yokoyama;H. Kotera;K. Wasa
Thermodynamic characteristics of single crystalline $\mathrm{Pb}({\mathrm{Zr}}_{0.52}{\mathrm{Ti}}_{0.48}){\mathrm{O}}_{3}$ (PZT) were investigated using c-axis oriented PZT films. The PZT films were epitaxially grown on Pt/MgO substrate and dielectric and ferroelectric properties were measured as a function of one-dimensional stress. The stress dependence of dielectric and ferroelectric properties was examined on the basis of the Landau-Devonshire's phenomenological theory and the free energy coefficients of single crystalline PZT films were obtained. The dielectric stiffness coefficients and electrostrictive coefficient of epitaxial PZT films were obtained to be ${\ensuremath{\alpha}}_{1}=\ensuremath{-}1.30\ifmmode\times\else\texttimes\fi{}{10}^{8}(\mathrm{m}/\mathrm{F}),$ ${\ensuremath{\alpha}}_{11}=3.07\ifmmode\times\else\texttimes\fi{}{10}^{8}({\mathrm{m}}^{5}/{\mathrm{C}}^{2}\mathrm{F}),$ ${\ensuremath{\alpha}}_{111}=\ensuremath{-}3.11\ifmmode\times\else\texttimes\fi{}{10}^{7}({\mathrm{m}}^{9}/{\mathrm{C}}^{2}\mathrm{F}),$ and ${Q}_{12}=\ensuremath{-}5.70\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}2}({\mathrm{m}}^{4}/{\mathrm{C}}^{2}),$ which are different from the values derived from the analysis of polycrystalline PZT. The temperature dependence of dielectric constant of the PZT films showed clear Curie-Weiss law and the dielectric stiffness coefficient ${\ensuremath{\alpha}}_{1}$ derived from this measurement was almost same value from the analysis of stress dependence of the dielectricity of the epitaxial PZT films.
Thermodynamic characteristics of single crystalline $\mathrm{Pb}({\mathrm{Zr}}_{0.52}{\mathrm{Ti}}_{0.48}){\mathrm{O}}_{3}$ (PZT) were investigated using c-axis oriented PZT films. The PZT films were epitaxially grown on Pt/MgO substrate and dielectric and ferroelectric properties were measured as a function of one-dimensional stress. The stress dependence of dielectric and ferroelectric properties was examined on the basis of the Landau-Devonshire's phenomenological theory and the free energy coefficients of single crystalline PZT films were obtained. The dielectric stiffness coefficients and electrostrictive coefficient of epitaxial PZT films were obtained to be ${\ensuremath{\alpha}}_{1}=\ensuremath{-}1.30\ifmmode\times\else\texttimes\fi{}{10}^{8}(\mathrm{m}/\mathrm{F}),$ ${\ensuremath{\alpha}}_{11}=3.07\ifmmode\times\else\texttimes\fi{}{10}^{8}({\mathrm{m}}^{5}/{\mathrm{C}}^{2}\mathrm{F}),$ ${\ensuremath{\alpha}}_{111}=\ensuremath{-}3.11\ifmmode\times\else\texttimes\fi{}{10}^{7}({\mathrm{m}}^{9}/{\mathrm{C}}^{2}\mathrm{F}),$ and ${Q}_{12}=\ensuremath{-}5.70\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}2}({\mathrm{m}}^{4}/{\mathrm{C}}^{2}),$ which are different from the values derived from the analysis of polycrystalline PZT. The temperature dependence of dielectric constant of the PZT films showed clear Curie-Weiss law and the dielectric stiffness coefficient ${\ensuremath{\alpha}}_{1}$ derived from this measurement was almost same value from the analysis of stress dependence of the dielectricity of the epitaxial PZT films.