Identification of Iron Transition Group Trace Impurities in GaN Bulk Crystals by Electron Paramagnetic Resonance
Identification of Iron Transition Group Trace Impurities in GaN Bulk Crystals by Electron Paramagnetic Resonance
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电子顺磁共振识别 GaN 块状晶体中铁过渡族痕量杂质
DOI：
10.4028/www.scientific.net/msf.258-263.1167
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发表时间：
1997
期刊：
影响因子：
--
通讯作者：
E. N. Mokhov
中科院分区：
文献类型：
--
作者：
P. Baranov;I. V. Ilyin;E. N. Mokhov
本文报道了用升华夹心法生长的块状GaN晶体中铁、锰、镍等微量杂质的电子顺磁共振观测结果。在GaN中观察到了由于与55Mn(i=52)核相互作用而形成的分辨超精细结构，这使得对杂质的明确识别成为可能。Mn2+(3d5)和Ni3+(3d7)电荷态的电子自旋分别为S=5.2和S=3.2，并占据GaN晶格中的镓位置。对于Mn2+，测得g=1.999，超精细结构常数A=70.10−4 cm−1，精细结构参数/D=240.10−4 cm−1。在强轴晶场下，GaN中Ni3+的电子顺磁共振谱具有S=3.2体系的特征各向异性。对于有效自旋为S‘=1 2的体系，有效g因子为g’∥=2.10和g‘⊥≅4.2 0。在GaN和ZnO晶体中，Mn2+和Ni3+的参数之间有相似之处。在3d7电子组态的Ni3+离子的3d能级内，1.047 eV处的零声子线似乎属于4T2(F)-4A2(F)跃迁。
Abstract We report on the observation of electron paramagnetic resonance of iron, manganese and nickel trace impurities in bulk GaN crystals grown by the sublimation sandwich method. The resolved hyperfine structure due to interaction with 55Mn ( I = 5 2 ) nuclei has been observed in GaN, allowing unambiguous identification of the impurity. Manganese and nickel exist in Mn2+ (3d5) and Ni3+ (3d7) charge states with electron spin S = 5 2 and S = 3 2 , respectively, and occupy gallium sites in the GaN lattice. For Mn2+ we found g = 1.999, hyperfine structure constant A = 70.10−4 cm−1 and fine structure parameter /D/ = 240.10−4 cm−1. The EPR spectrum of Ni3+ in GaN had the characteristic anisotropy of an S = 3 2 system in a strong axial crystalline field. The effective g-factor values were found to be g′∥ = 2.10 and g′⊥ ≅ 4.20 for a system with an effective spin S′ = 1 2 . An analogy was revealed between the parameters of Mn2+ and Ni3+ in GaN and ZnO crystals. The zero-phonon line at 1.047 eV seems to belong to transition 4T2(F)-4A2(F) within 3d levels of Ni3+ ion with a 3d7 electronic configuration.
影响因子：
3.7
作者：
Whissell PD;Tohyama S;Martin LJ
通讯作者：
Martin LJ