EVIDENCE OF A SURFACE-MEDIATED MAGNETICALLY INDUCED MISCIBILITY GAP IN CO-PT ALLOY THIN-FILMS
EVIDENCE OF A SURFACE-MEDIATED MAGNETICALLY INDUCED MISCIBILITY GAP IN CO-PT ALLOY THIN-FILMS
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DOI：
10.1103/physrevlett.75.1843
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发表时间：
1995-08-28
影响因子：
8.6
通讯作者：
HELLMAN, F
中科院分区：
文献类型：
--
作者：
ROONEY, PW;SHAPIRO, AL;HELLMAN, F
（100）和（111）取向的单晶CoPt3薄膜在-50到800摄氏度的生长温度范围内沉积，居里温度比在400摄氏度附近生长的沉积薄膜（两种取向）中的均匀合金的预期值提高了200摄氏度。我们将这解释为先前未观察到的，表面介导的，磁驱动的混相间隙的证据。在400℃附近生长的沉积膜（两种取向）中也观察到较大的垂直磁各向异性。
(100) and (111) oriented single-crystal CoPt3 films were deposited over a range of growth temperatures from -50 to 800 degrees C. The Curie temperature is increased by 200 degrees C over the value expected for the homogeneous alloy in the as-deposited films (of both orientations) grown near 400 degrees C. We interpret this as evidence for a previously unobserved, surface-mediated, magnetically driven miscibility gap in vapor-deposited CoPt3 films. Large perpendicular magnetic anisotropy is also observed in the as-deposited films (of both orientations) grown near 400 degrees C.