875-MW/cm2 Low-Resistance NO2 p-type Doped Chemical Mechanical Planarized Diamond MOSFETs
875-MW/cm2 Low-Resistance NO2 p-type Doped Chemical Mechanical Planarized Diamond MOSFETs
复制标题
875MW/cm2 低电阻 NO2 p 型掺杂化学机械平坦化金刚石 MOSFET
DOI：
10.1109/led.2022.3164603
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发表时间：
2022
影响因子：
4.9
通讯作者：
and M. Kasu
中科院分区：
文献类型：
--
作者：
N. C. Saha;S. -W. Kim;T. Oishi;and M. Kasu
在这项研究中，一个Al 2 O3钝化，NO2 p型掺杂金刚石金属氧化物半导体场效应晶体管（MOSFET）的化学机械平面化的高品质异质外延金刚石（Kenzan diamond®）衬底上制造。该MOSFET具有7.54cm2的低导通电阻和-2568 V的高截止击穿电压。在金刚石表面上进行200 h的化学机械平坦化（CMP），有效地去除了亚表面损伤，从而得到低电阻的金刚石表面。因此，MOSFET的漏极电流密度高达−0.68 A/mm，最大可用功率密度（Baliga的品质因数）为874.6 MW/cm 2，这是金刚石器件的最高报告值。
In this study, an Al2O3passivated, NO2p-type doped diamond metal–oxide–semiconductor field-effect transistor (MOSFET) was fabricated on a chemical mechanical planarized high-quality heteroepitaxial diamond (Kenzan diamond®) substrate. This MOSFET exhibited a low specific ON-resistance of 7.54cm2and a high OFF-state breakdown voltage of −2568 V. The chemical mechanical planarization (CMP) was performed for 200 h on the diamond surface which effectively removed the subsurface damages resulting in a low resistive diamond surface. Thus, the MOSFET showed a high drain current density of −0.68 A/mm and a maximum available power density (Baliga’s figure-of-merit) of 874.6 MW/cm2—the highest reported value for diamond devices.