Improved Schottky barrier characteristics for AlInN/GaN diodes by oxygen plasma treatment
Improved Schottky barrier characteristics for AlInN/GaN diodes by oxygen plasma treatment
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DOI：
10.1016/j.mssp.2017.10.004
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发表时间：
2018-02
影响因子：
4.1
通讯作者：
Lianhong Yang;Baohua Zhang;Yanqing Li;Dunjun Chen
中科院分区：
文献类型：
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作者：
Lianhong Yang;Baohua Zhang;Yanqing Li;Dunjun Chen
研究了电感耦合等离子体氧等离子体处理对AlInN/GaN肖特基二极管电流输运特性的影响。I-V测试结果表明，氧等离子体处理可以显著抑制肖特基二极管的反向漏电流，抑制幅度超过3个数量级，同时通过在AlInN表面形成一层薄的氧化层，可以显著提高有效势垒高度，提高肖特基接触的理想因子。然而，在低正向偏压下，I-V曲线会出现电流响应的短暂和可恢复的降低。进一步的分析表明，与氧等离子体处理诱导的氮空位或其复合物有关的施主类陷阱是造成这种瞬态电流降低的原因。
In this work, the effects of oxygen plasma treatment by inductive coupled plasma on current transport of AlInN/GaN Schottky diodes were investigated. The current-voltage (I-V) results show that oxygen plasma treatment can significantly suppress reverse leakage current of the Schottky diodes by over three orders of magnitude, and meanwhile can enhance remarkably the effective barrier height and improve the ideality factor of the Schottky contact by forming a thin oxidation layer at the AlInN surface. However, I-V curve occurs a transient and recoverable reduction in current response at low forward bias. The further analysis indicates that donor-like traps related to nitrogen vacancies or their complexes induced by oxygen plasma treatment are responsible for this transient current reduction.