Single phase ZnSnAs2 grown by molecular beam epitaxy
Single phase ZnSnAs2 grown by molecular beam epitaxy
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分子束外延生长单相 ZnSnAs2
DOI：
10.1116/1.589964
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发表时间：
1998
影响因子：
1.4
通讯作者：
M. Baidakova
中科院分区：
文献类型：
--
作者：
G. Seryogin;S. Nikishin;H. Temkin;R. Schlaf;L. Sharp;Y. Wen;B. Parkinson;V. Elyukhin;Y. Kudriavtsev;A. Mintairov;N. Faleev;M. Baidakova
用分子束外延法在Si和InP衬底上生长了ZnSnAs 2外延层。生长条件进行了研究，通过改变衬底温度和锡，砷，锌通量。在Ts=300-320 °C，PAs_4/PZn = 1.5-4的助熔剂比下，获得了最佳的形貌和化学计量比。通过二次中性质谱、高分辨率X射线衍射、拉曼光谱和原子力显微镜对样品进行了评价。在InP（001）衬底上生长的ZnSnAs 2单相层显示出−3.4×10−4的晶格失配。
Epitaxial layers of ZnSnAs2 were grown by molecular beam epitaxy on Si and InP substrates. Growth conditions were investigated by varying the substrate temperature and the Sn, As, and Zn fluxes. The best morphology and stoichiometry was obtained at Ts=300–320 °C and the flux ratio of PAs4/PZn∼1.5–4. The samples were evaluated by secondary neutral mass spectroscopy, high resolution x-ray diffraction, Raman spectroscopy, and atomic force microscopy. Single phase layers of ZnSnAs2 grown on InP(001) substrates show lattice mismatch of −3.4×10−4.