Transition Metal Silicides
Transition Metal Silicides
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DOI：
10.1146/annurev.ms.13.080183.001001
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发表时间：
1983-08
期刊：
影响因子：
--
通讯作者：
S. Murarka
中科院分区：
文献类型：
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作者：
S. Murarka
有几篇关于过渡金属硅化物的评论论文，近年来由于其在硅集成电路 (SIC) 中的潜在用途而引起了相当大的关注 (1-7)。 Aronsson 等人 (1) 在其著作《硼化物、硅化物和磷化物》中批判性地评论了制备、性质和晶体化学。 Wehrmann (2) 强调了使用粉末冶金技术形成的硅化物的高温行为。 Van Gurp (3)、Tu & Mayer (4) 和 Ottaviani (5) 回顾了薄膜之间以及薄膜与基板之间反应形成的薄膜硅化物。 Murarka (6) 和 Mohammadi (7) 考虑了硅化物在 SIC 中的应用。从本世纪初到 20 世纪 60 年代进行的大多数硅化物研究都使用粉末冶金技术来生产硅化物。这些研究揭示了硅化物的特性，例如电阻率、高温稳定性、耐腐蚀性，以及最重要的硅化物晶体化学和金属硅相图。在 SIC 中使用硅化物作为导体 [作为肖特基势垒和接触 (8, 9) 以及作为栅极和互连金属化 (10)] 的可能性推动了薄膜硅化物研究。除了肖特基势垒高度和电阻率的测量之外，过去二十年还研究了金属-硅系统中金属间化合物的形成、反应和相互扩散动力学、SIC加工和操作温度下的稳定性、机械稳定性、氧化和蚀刻特性以及硅上的外延生长。在这篇综述中，研究了几种硅化物的特性。仅考虑周期表 IV A、V A、VIA 和 VIII 族的过渡金属硅化物。在可能的情况下，硅化物会相应地分组。给出了组内和组间硅化物之间的一般关系。希望能够对硅化物有更好的了解。
There are several review papers written on transition metal silicides, which have attracted considerable attention in recent years because of their potential usefulness in silicon integrated circuits (SICs) (1-7). Aronsson et al (1) critically reviewed the preparation, properties, and crystal chemistry in their book Borides, Silicides and Phosphides. Wehrmann (2) emphasized the high-temperature behavior of the silicides formed by using powder metallurgical techniques. Van Gurp (3), Tu & Mayer (4), and Ottaviani (5) reviewed the thin-film silicides formed by reaction between thin films and between thin films and substrates. Murarka (6) and Mohammadi (7) considered the silicides for application in SICs. Most of the silicide research, performed from the beginning of this century through the 1960s, used powder metallurgical techniques to produce silicides. These studies revealed the silicide properties such as electrical resistivities, high-temperature stability, corrosion resistance, and, most important of all, the silicide crystal chemistry and metal-silicon phase diagrams. The possibility of using silicides as conductors [as Schottky barriers and contacts (8, 9) and as gate and interconnection metallization (10)] in SICs motivated thin-film silicide research. Besides the measure ments of Schottky barrier heights and resistivities, the intermetallic formation in the metal-silicon systems, reaction and interdiffusion kinetics, stability at the SIC processing and operating temperatures, mechanical stability, oxidation and etching characteristics, and epitaxial growth on silicon have all been investigated in the last two decades. In this review several silicide propcrties are examined. Only transition metal silicides of the Periodic Table groups IV A, V A, VIA, and VIII are considered. Where possible, silicides are grouped accordingly. General relationships among silicides in a group and among the groups are presented. It is hoped that a better understanding of the silicides will emerge.