Gas sensing properties of thin- and thick-film tin-oxide materials
Gas sensing properties of thin- and thick-film tin-oxide materials
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DOI：
10.1016/s0925-4005(01)00672-4
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发表时间：
2001-06-15
影响因子：
8.4
通讯作者：
Kiesewetter, O
中科院分区：
文献类型：
--
作者：
Becker, T;Ahlers, S;Kiesewetter, O
Comparative gas detection measurements have been performed on thin-film (d similar to 50-300 nm) and thick-film (d similar to 15-80 mum) SnO2 devices. We find that at normal sensor operation temperatures of the order of 400 degreesC thin-film devices mainly respond to oxidising gases such as O-3 and NO2, whereas thick-film ones preferably respond to reducing species like CO and CH4. A significant response towards oxidising species, however, was observed upon reducing the operation temperature of the thick-film devices to about 100 degreesC. We explain these effects in terms of a simple diffusion-reaction model taking into account the different architectures of thin- and thick-him gas sensing devices. (C) 2001 Elsevier Science B.V. All rights reserved.
