Deposition of SiO2 and TiO2 thin films by plasma enhanced chemical vapor deposition for antireflection coating
Deposition of SiO2 and TiO2 thin films by plasma enhanced chemical vapor deposition for antireflection coating
复制标题
DOI：
10.1016/s0022-3093(97)00175-0
复制
发表时间：
1997-08-01
影响因子：
3.5
通讯作者：
Joseph, J
中科院分区：
文献类型：
--
作者：
Martinet, C;Paillard, V;Joseph, J
分别使用 O-2 和四乙氧基硅烷 (TEOS) 或异丙醇钛 (TIPT) 作为前驱体，通过电子回旋共振 (ECR) 等离子体增强化学气相沉积 (PECVD) 在低温下沉积二氧化硅和二氧化钛薄膜。为了控制沉积过程中的厚度和折射率，等离子体反应器配备了原位光谱椭圆计。通过椭圆偏振光谱仪、X 射线光电子能谱 (XPS) 和化学蚀刻速率研究了沉积动力学和层特性。制备双膜减反射涂层并使用紫外-可见近红外光谱仪测量反射率。报告结果表明，通过 PECVD 低温沉积 SiO2 和 TiO2 薄膜是生产太阳能电池抗反射涂层的一种有前景的方法。 (C) 1997 Elsevier Science B.V.
Silicon dioxide and titanium dioxide films were deposited at low temperature by electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (PECVD) using respectively O-2 and tetraethoxysilane (TEOS) or titanium isopropoxide (TIPT) as precursors. To control the thickness and the refractive index during deposition, the plasma reactor was equipped with an in situ spectroscopic ellipsometer. Deposition kinetics and layer properties were investigated by spectroscopic ellipsometry, X-ray photoelectron spectroscopy (XPS) and chemical etch rate. A double film antireflection coating was fabricated and reflectance was measured using a UV-visible near-infrared spectrometer. Results reported demonstrate that deposition of SiO2 and TiO2 films at low temperature by PECVD is a promising method to produce antireflection coatings for solar cells. (C) 1997 Elsevier Science B.V.