Theoretical Study of Silicon Adatom Transfer from the Silicon Surface in Scanning Tunneling Microscopy
Theoretical Study of Silicon Adatom Transfer from the Silicon Surface in Scanning Tunneling Microscopy
复制标题
扫描隧道显微镜中硅吸附原子从硅表面转移的理论研究
DOI：
10.1143/jjap.36.3791
复制
发表时间：
1997
影响因子：
1.5
通讯作者：
M. Tsukada
中科院分区：
文献类型：
--
作者：
N. Kobayashi;K. Hirose;M. Tsukada
利用扫描隧道显微镜的尖端，用递归转移矩阵法研究了从硅表面位移的硅配原子的电子结构。该方法是计算电场和电流作用下双电极系统电子态的有效方法。给出了在不同的偏置电压值下，附原子从表面向尖端运动的绝热势面和相应的诱导电子密度分布。当尖端-表面距离为11小时时，正负偏压情况下的激活势垒高度都有所下降，而只有在尖端-表面距离为8小时时，正负偏压情况下的激活势垒高度单调下降。
We have investigated the electronic structures of a silicon adatom displaced from a silicon surface with the tip of a scanning tunneling microscope using the recursion-transfer-matrix method. This method is an effective means of calculation for electronic states of a bielectrode system under electric field and current. The adiabatic potential surfaces of the adatom moving from the surface to the tip and the corresponding induced electron density distributions are presented for several values of bias voltage. A decrease in the activation barrier height is seen for both positive and negative bias cases when the tip-surface distance is 11 bohrs, while a monotonous decrease is seen only for the positive bias case at a tip-surface distance of 8 bohrs.