Generation of clean iron nanocrystals on an ultra-thin SiO(x) film on Si(001).
Generation of clean iron nanocrystals on an ultra-thin SiO(x) film on Si(001).
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在 Si(001) 上的超薄 SiO(x) 薄膜上生成清洁的铁纳米晶体。
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
H. Marbach
中科院分区：
文献类型：
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作者：
Marie;F. Vollnhals;M. Schirmer;H. Steinrück;H. Marbach
在超高压条件下原位制备的Si（001）上超薄SiO(x)薄膜（厚度≈0.5 nm）上，暴露于Fe(CO)(5)后，形成了尺寸可达~75 nm的纯立方Fe纳米晶体。Fe(CO)(5)初始分解导致Fe簇生长的活性中心被认为是SiO位点。在这些位置成核后，由于Fe(CO)(5)在室温下的自催化解离，观察到进一步的晶体生长。在气体暴露之前，用聚焦电子束（15 keV）照射表面可以增加铁簇的密度。电子辐照下活性SiO位的形成归因于氧通过Knotek-Feibelman机制的解吸。
Upon exposure to Fe(CO)(5), the formation of pure cubic Fe nanocrystals with dimensions up to ~75 nm is reported on ultra-thin SiO(x) films (thickness ≈ 0.5 nm) on Si(001), which have been prepared in situ under UHV conditions. The active centers for initial decomposition of Fe(CO)(5) resulting in the growth of the Fe clusters are proposed to be SiO sites. After nucleation at these sites, further crystal growth is observed due to autocatalytic dissociation of Fe(CO)(5) at room temperature. The density of the Fe clusters can be increased by irradiating the surface with a focused electron beam (15 keV) prior to gas exposure. The formation of the active SiO sites upon electron irradiation is attributed to oxygen desorption via the Knotek-Feibelman mechanism.