Unexpected Large Hole Effective Masses in SnSe Revealed by Angle-Resolved Photoemission Spectroscopy
Unexpected Large Hole Effective Masses in SnSe Revealed by Angle-Resolved Photoemission Spectroscopy
复制标题
角分辨光电发射光谱揭示了 SnSe 中意想不到的大孔有效质量
DOI：
10.1103/physrevlett.119.116401
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发表时间：
2017-09-13
影响因子：
8.6
通讯作者：
He, Jiaqing
中科院分区：
文献类型：
--
作者：
Lu, Qiangsheng;Wu, Minghui;He, Jiaqing
SnSe has emerged as an efficient thermoelectric material since a high value of the thermoelectric figure of merit (ZT) has been reported recently. Here we show with systematic angle resolved photoemission spectroscopy data that the low-lying electronic structures of undoped and hole-doped SnSe crystals exhibit noticeable temperature variation from 80 to 600 K. In particular, the hole effective masses for the two lowest lying valence band maxima are found to be very large and increase with decreasing temperature. Thermoelectric parameters derived from such hole-mass enhancement agree well with the transport values, indicating comprehensively a reduced impact of multivalley transport to the system's thermoelectric performance.
