Threshold Estimation of GaN-Based Surface Emitting Lasers Operating in Ultraviolet Spectral Region
Threshold Estimation of GaN-Based Surface Emitting Lasers Operating in Ultraviolet Spectral Region
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紫外光谱区 GaN 基表面发射激光器的阈值估计
DOI：
10.1143/jjap.34.3527
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发表时间：
1995
影响因子：
1.5
通讯作者：
Kenichi Iga Kenichi Iga
中科院分区：
文献类型：
--
作者：
T. Honda;A. Katsube;T. Sakaguchi;F. Koyama;Kenichi Iga Kenichi Iga
提出了一种工作在紫外波段的GaN基垂直腔面发射激光器，并估算了其阈值电流密度。计算结果表明，采用AlN/AlGaN多层膜反射镜等高反射镜，可以实现以GaN层为有源区的低阈值面发射激光器。
The GaN-based vertical cavity surface emitting laser operating in the ultraviolet spectral region is proposed and its threshold current density is estimated. The calculated result indicates that low-threshold surface emitting lasers using a GaN layer as an active region can be realized by employing reasonably highly reflective mirrors such as AlN/AlGaN multilayer mirrors.