Centimeter-Scale Few-Layer PdS2: Fabrication and Physical Properties
Centimeter-Scale Few-Layer PdS2: Fabrication and Physical Properties
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厘米级少层 PdS2：制造和物理性能
DOI：
10.1021/acsami.1c11824
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发表时间：
2021
影响因子：
9.5
通讯作者：
Yang Peng
中科院分区：
文献类型：
--
作者：
Zhang Xudong;Sun Guowen;Lu Jiangwei;Yang Wanfan;Zhuang Wenbo;Han Kai;Wang Xiao;Wan Yanfen;Yu Xiaohua;Yang Peng
为了开发下一代电子器件，迫切需要新型半导体材料。过渡金属二卤化物(TMD)有望成为新兴电子应用的新一代半导体材料。作为-10族TMDs的一员，PdS2具有显著的层数依赖的能带结构和极高的室温载流子迁移率。在这里，我们展示了用物理气相沉积(PVD)和化学气相沉积(CVD)相结合的方法实验实现了厘米级的少层PdS2的合成。首次利用角分辨偏振拉曼光谱研究了几层PdS2的光学各向异性。此外，还研究了在12-300K温度范围内喇曼光谱随温度的变化。为了进一步了解少层PdS_2的电学性质，我们制备并研究了场效应晶体管(FET)器件。电子学测量表明，PdS2材料具有可调谐的双极输运机制，场效应迁移率高达∼388cm2V-1s-1，开关比为∼800，这在以前的文献中没有报道过。为了更好地理解实验结果，用密度泛函理论(DFT)计算了PdS2的电子结构。这些优良的物理性能对开发高性能的光电应用非常有帮助。
To develop next-generation electronic devices, novel semiconductive materials are urgently required. The transition metal dichalcogenides (TMDs) hold the promise of next generation of semiconductor materials for emerging electronic applications. As a member of the group-10 TMDs, PdS2has a notable layer-number-dependent band structure and tremendously high carrier mobility at room temperature. Here, we demonstrate the experimental realization of centimeter-scale synthesis of the few-layer PdS2by the combination of physical vapor deposition (PVD) and chemical vapor deposition (CVD) methods. For the first time, the optical anisotropic properties of the few-layer PdS2were investigated through angle-resolved polarized Raman spectroscopy. Also, the evolution of Raman spectra was studied depending on the temperature in the range of 12–300 K. To further understand the electronic properties of the few-layer PdS2, the field-effect transistor (FET) devices were fabricated and investigated. The electronic measurements of such FET devices reveal that the PdS2materials exhibit a tunable ambipolar transport mechanism with field-effect mobility of up to ∼388 cm2V–1s–1and the on/off ratio of ∼800, which were not reported before in the literature. To well understand the experimental results, the electronic structure of PdS2was determined using density functional theory (DFT) calculations. These excellent physical properties are very helpful in developing high-performance opto-electronic applications.