Same Precursor, Two Different Products: Comparing the Structural Evolution of In–Ga–O “Gel-Derived” Powders and Solution-Cast Films Using Pair Distribution Function Analysis
Same Precursor, Two Different Products: Comparing the Structural Evolution of In–Ga–O “Gel-Derived” Powders and Solution-Cast Films Using Pair Distribution Function Analysis
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相同的前驱体,两种不同的产品:使用配对分布函数分析比较 In-Ga-O-凝胶衍生粉末和溶液流延薄膜的结构演变
DOI:
10.1021/jacs.7b02097
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发表时间:
2017
影响因子:
15
通讯作者:
Johnson, David C.
中科院分区:
文献类型:
--
作者:
Wood, Suzannah R.;Woods, Keenan N.;Plassmeyer, Paul N.;Marsh, David A.;Johnson, Darren W.;Page, Catherine J.;Jensen, Kirsten M.;Johnson, David C.
Amorphous metal oxides are central to a variety of technological applications. In particular, indium gallium oxide has garnered attention as a thin-film transistor channel layer material. In this work we examine the structural evolution of indium gallium oxide gel-derived powders and thin films using infrared vibrational spectroscopy, X-ray diffraction, and pair distribution function (PDF) analysis of X-ray total scattering from standard and normal incidence thin-film geometries (tfPDF). We find that the gel-derived powders and films from the same aqueous precursor evolve differently with temperature, forming mixtures of Ga-substituted In2O3and In-substituted β-Ga2O3with different degrees of substitution. X-ray total scattering and PDF analysis indicate that the majority phase for both the powders and films is an amorphous/nanocrystalline β-Ga2O3phase, with a minor constituent of In2O3with significantly larger coherence lengths. This amorphous β-Ga2O3phase could not be identified using the conventional Bragg diffraction techniques traditionally used to study crystalline metal oxide thin films. The combination of Bragg diffraction and tfPDF provides a much more complete description of film composition and structure, which can be used to detail the effect of processing conditions and structure–property relationships. This study also demonstrates how structural features of amorphous materials, traditionally difficult to characterize by standard diffraction, can be elucidated using tfPDF.