Thinning of a Two-Inch Silicon Carbide Wafer by Plasma Chemical Vaporization Machining Using a Slit Electrode
Thinning of a Two-Inch Silicon Carbide Wafer by Plasma Chemical Vaporization Machining Using a Slit Electrode
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DOI：
10.4028/www.scientific.net/msf.778-780.750
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发表时间：
2014-02
期刊：
影响因子：
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通讯作者：
Yu Okada;H. Nishikawa;Y. Sano;K. Yamamura;K. Yamauchi
中科院分区：
文献类型：
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作者：
Yu Okada;H. Nishikawa;Y. Sano;K. Yamamura;K. Yamauchi
近年来，硅（Si）主要用于功率器件，但其性能已达到极限。因此，碳化硅（SiC）功率器件因其能够制造低功耗器件而受到关注。为了降低垂直功率晶体管的导通电阻，器件加工后需要进行背面减薄。然而，由于SiC晶片硬度高、脆性大，在减薄过程中容易产生裂纹和碎裂，因此很难通过常规机械加工以高去除率减薄SiC晶片。因此，我们尝试使用等离子体化学汽化加工（PCVM）来减薄SiC晶片，PCVM是使用大气压等离子体的等离子体蚀刻。在这项研究中，我们描述了使用新开发的狭缝电极的加工特性，该狭缝电极由两部分组成，并具有允许新气体通过的狭缝。
In recent years, silicon (Si) has been mainly used in power devices, but the limit of its performance is being reached. Therefore, silicon carbide (SiC) power devices have been attracting attention because they enable the fabrication of devices with low power consumption. To reduce the on-resistance in vertical power transistors, backside thinning is required after device processing. However, it is difficult to thin a SiC wafer with a high removal rate by conventional mechanical processing because its high hardness and brittleness cause cracking and chipping during thinning. Therefore, we have attempted to thin a SiC wafer using plasma chemical vaporization machining (PCVM), which is plasma etching using atmospheric-pressure plasma. In this study, we describe a machining property using a newly developed slit electrode that is composed of two parts and has a slit that allows for a new gas to pass.