Spin accumulation and spin lifetime in p-type germanium at room temperature
Spin accumulation and spin lifetime in p-type germanium at room temperature
复制标题
室温下 p 型锗的自旋积累和自旋寿命
DOI：
10.1143/apex.5.053004
复制
发表时间：
2012
影响因子：
2.3
通讯作者：
K. Ando
中科院分区：
文献类型：
--
作者：
S. Iba;H. Saito;A. Spiesser;S. Watanabe;R. Jansen;S;Yuasa;K. Ando
在室温下，利用自旋极化隧道效应，在空穴浓度为8× 1018 cm-3的Ge上外延Fe/MgO接触中，成功地证实了p型Ge中的电产生和自旋积累的探测.在Hanle测量中，自旋累积产生每mA隧道电流约40 µV的自旋信号。提取的空穴自旋寿命为13 ps，远大于动量弛豫时间。相应的自旋扩散长度为80 nm，表明在p型Ge中的自旋信息的通信在场效应晶体管的典型沟道长度上是可能的。
The electrical creation and detection of spin accumulation in p-type Ge were successfully demonstrated at room temperature by spin-polarized tunneling in epitaxial Fe/MgO contacts on Ge with a hole concentration of 8× 10 18 cm-3. In Hanle measurements, the spin accumulation produces a spin signal of about 40 µV per mA of tunnel current. The extracted spin lifetime of holes is 13 ps, which is much longer than the momentum relaxation time. The corresponding spin-diffusion length is 80 nm, suggesting that communication of spin information in p-type Ge is possible over the typical channel length of a field-effect transistor.