A Semi-Floating Gate Transistor for Low-Voltage Ultrafast Memory and Sensing Operation
A Semi-Floating Gate Transistor for Low-Voltage Ultrafast Memory and Sensing Operation
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用于低压超快存储器和传感操作的半浮栅晶体管
DOI：
10.1126/science.1240961
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发表时间：
2013-08-09
期刊：
影响因子：
56.9
通讯作者：
Zhang, David Wei
中科院分区：
文献类型：
--
作者：
Wang, Peng-Fei;Lin, Xi;Zhang, David Wei
为了继续提高高速计算的主要器件、金属氧化物半导体场效应晶体管（MOSFET）和浮栅（FG）MOSFET的性能，需要采用先进的设计。Wang等人（第640页）制造了一种半浮栅（SFG）晶体管，其中隧穿场效应晶体管将正掺杂浮栅耦合到负掺杂漏极区。存储在SFG上的电荷被用来改变晶体管开关的电压阈值，这反过来又加快了它的工作速度，降低了功耗。这些器件用于超高速存储器以及光传感和成像。嵌入式隧穿场效应晶体管通过改变主栅电极的电压阈值来加速开关。随着集成电路的半导体器件接近缩放的物理限制，需要替代的晶体管和存储器设计来实现速度、密度和功耗的改进。我们报告的晶体管，使用嵌入式隧穿场效应晶体管的充电和放电的半浮栅。这种晶体管工作在低电压（≤2.0伏），具有3.1伏的大阈值电压窗口，可以实现超高速写入操作（时间尺度为~1纳秒）。当晶体管暴露于光时，观察到漏极电流对光强度的线性依赖性，因此可能的应用包括具有高密度和高性能的图像传感。
Faster at the Gate Advanced designs will be needed to continue to improve the performance of the main components of high-speed computing, metal-oxide semiconductor field-effect transistors (MOSFETs) and floating-gate (FG) MOSFETs. Wang et al. (p. 640) fabricated a semi-floating gate (SFG) transistor in which a tunneling field-effect transistor couples the positively doped floating gate to the negatively doped drain region. The charge stored on the SFG was used to shift the voltage threshold for switching the transistor, which in turn sped up its operation and lowered the power consumed. These devices were used for ultrahigh-speed memory and in light sensing and imaging. An embedded tunneling field-effect transistor speeds switching by varying the voltage threshold of the main gate electrode. As the semiconductor devices of integrated circuits approach the physical limitations of scaling, alternative transistor and memory designs are needed to achieve improvements in speed, density, and power consumption. We report on a transistor that uses an embedded tunneling field-effect transistor for charging and discharging the semi-floating gate. This transistor operates at low voltages (≤2.0 volts), with a large threshold voltage window of 3.1 volts, and can achieve ultra–high-speed writing operations (on time scales of ~1 nanosecond). A linear dependence of drain current on light intensity was observed when the transistor was exposed to light, so possible applications include image sensing with high density and performance.