On the dislocation-oxygen interactions in Czochralski-grown Si: oxygen diffusion and binding at low temperatures
On the dislocation-oxygen interactions in Czochralski-grown Si: oxygen diffusion and binding at low temperatures
复制标题
直拉生长硅中的位错-氧相互作用：低温下的氧扩散和结合
DOI：
--
复制
发表时间：
2002
期刊：
影响因子：
--
通讯作者：
P. Wilshaw
中科院分区：
文献类型：
--
作者：
S. Senkader;A. Giannattasio;R. Falster;P. Wilshaw
直拉生长硅中氧原子与位错之间的相互作用已通过实验研究。关于氧原子锁定位错的测量已在 450–850°C 的温度范围内进行了不同的退火时间。使用低氧含量 (2.6 × 1017 cm−3) 的样品，可以研究在低于 700°C 的温度下氧原子与位错结合的性质，在这种情况下，氧在硅中的扩散具有众所周知的“异常”行为。研究发现，虽然高于 700°C 的温度下的结合焓与之前公布的值非常吻合，但在较低温度下其值有所不同。我们测得在 450-650°C 的温度范围内氧-位错结合焓约为 0.2 eV。
The interaction between oxygen atoms and dislocations in Czochralski-grown silicon has been studied experimentally. Measurements concerning the locking of dislocations by oxygen atoms have been carried out in the temperature range 450–850°C for different annealing times. Using samples with low oxygen content (2.6 × 1017 cm−3) it has been possible to investigate the nature of binding of oxygen atoms to dislocations for temperatures lower than 700°C for which diffusion of oxygen in silicon has well known 'anomalous' behaviour. It has been found that although the binding enthalpy for temperatures larger than 700°C agrees well with the previously published value, its value is different for lower temperatures. We measured the oxygen–dislocation binding enthalpy to be about 0.2 eV in the temperature range of 450–650°C.