Single Event Effects in 1Gbit 90nm NAND Flash Memories under Operating Conditions
Single Event Effects in 1Gbit 90nm NAND Flash Memories under Operating Conditions
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工作条件下 1Gbit 90nm NAND 闪存的单粒子效应
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
M. Maccarrone
中科院分区：
文献类型：
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作者：
M. Bagatin;G. Cellere;S. Gerardin;A. Paccagnella;A. Visconti;S. Beltrami;M. Maccarrone
我们测试了一个商业1 Gbit 90 nm NAND存储器暴露于恒定通量的重离子，旨在研究其在空间环境中的行为。我们识别并分类了不同经营条件下的不同类型的错误。我们观察到在浮栅阵列和页面缓冲器中的单个位翻转，以及在编程期间的功能中断，以及在较小程度上的擦除操作。我们的研究结果提供了一些见解可能出现的问题，也可能在海平面与未来（和更敏感）的闪光一代。
We tested a commercial 1 Gbit 90 nm NAND memory under exposure to a constant flux of heavy ions, aiming to study its behaviour in the space environment. We identified and classified different types of errors under various operating conditions. We observed single bit upsets both in the floating gate array and in the page buffer, alongside with functional interruptions during program and, to a lesser extent, erase operations. Our results provide some insight on possible issues which may arise also at sea-level with future (and more sensitive) flash generations.