Gate-controlled electromechanical backaction induced by a quantum dot
Gate-controlled electromechanical backaction induced by a quantum dot
复制标题
量子点引起的门控机电反作用
DOI：
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发表时间：
2016
影响因子：
16.6
通讯作者：
H. Yamaguchi
中科院分区：
文献类型：
--
作者：
Y. Okazaki;I. Mahboob;K. Onomitsu;S. Sasaki;H. Yamaguchi
集成到机械谐振器中的基于半导体的量子结构已经成为一种独特的平台，用于在宏观声子和介观电子自由度之间产生纠缠。实现这一目标的一个关键挑战是创建和控制两个截然不同的系统之间的耦合的能力。在这里，这样的耦合是证明在一个混合装置组成的栅极定义的量子点集成到一个基于压电的机械谐振器，使毫开尔文声子状态通过量子点中的电荷波动被检测。相反，量子点中的单电子传输可以引起对力学的反作用，其中量子点的适当偏置可以实现机械运动的阻尼甚至电流驱动放大。这种电子输运诱导的机械谐振器动力学控制铺平了道路，包括电流注入声子激光器和按需单声子发射器的混合半导体器件的新的类别。量子结构和机械谐振器之间的耦合仍然是一个挑战。在这里，作者耦合量子点和压电微谐振器，并表明量子点中的栅极诱导单电子传输能够控制机械响应的幅度。
Semiconductor-based quantum structures integrated into mechanical resonators have emerged as a unique platform for generating entanglement between macroscopic phononic and mesocopic electronic degrees of freedom. A key challenge to realizing this is the ability to create and control the coupling between two vastly dissimilar systems. Here, such coupling is demonstrated in a hybrid device composed of a gate-defined quantum dot integrated into a piezoelectricity-based mechanical resonator enabling milli-Kelvin phonon states to be detected via charge fluctuations in the quantum dot. Conversely, the single electron transport in the quantum dot can induce a backaction onto the mechanics where appropriate bias of the quantum dot can enable damping and even current-driven amplification of the mechanical motion. Such electron transport induced control of the mechanical resonator dynamics paves the way towards a new class of hybrid semiconductor devices including a current injected phonon laser and an on-demand single phonon emitter. Coupling between quantum structures and mechanical resonators remains a challenge. Here, the authors couple a quantum dot and a piezoelectric microresonator and show that gate-induced single electron transport in the quantum dot enables control of the amplitude of the mechanical response.