Effect of hot implantation on ON-current enhancement utilizing isoelectronic trap in Si-based tunnel field-effect transistors
Effect of hot implantation on ON-current enhancement utilizing isoelectronic trap in Si-based tunnel field-effect transistors
复制标题
热注入对硅基隧道场效应晶体管等电子陷阱增强导通电流的影响
DOI：
10.7567/apex.8.036503
复制
发表时间：
2015
影响因子：
2.3
通讯作者：
H. Ota
中科院分区：
文献类型：
--
作者：
T. Mori;W. Mizubayashi;Y. Morita;S. Migita;K. Fukuda;N. Miyata;T. Yasuda;M. Masahara;H. Ota
最近提出了一种利用Al-N等电子陷阱(IET)的硅基隧道场效应晶体管(TFET)的隧道电流增强技术。在这项研究中，我们研究了热注入作为Al-N等电子杂质的掺杂技术。热注入减少了Al和N注入工艺引起的损伤，导致IET辅助TFET的性能改善，例如，在0.5V的操作电压下，驱动电流提高了12倍，亚阈值斜率降低了约三分之一。通过热注入，我们可以在采用IET技术的硅基TFET中获得更高的驱动电流。
A tunneling-current enhancement technology for Si-based tunnel field-effect transistors (TFETs) utilizing an Al–N isoelectronic trap (IET) has been proposed recently. In this study, we investigate hot implantation as a doping technique for Al–N isoelectronic impurity. Hot implantation reduces the damage induced by Al and N implantation processes, resulting in performance improvement of IET-assisted TFETs, e.g., a 12-fold enhancement in the driving current at an operation voltage of 0.5 V and an approximately one-third reduction in the subthreshold slope. By hot implantation, we can achieve a higher driving current in Si-based TFETs using the IET technology.