Nitridation for HfO2 high-k films on Si by an NH3 annealing treatment
Nitridation for HfO2 high-k films on Si by an NH3 annealing treatment
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DOI：
10.1063/1.2202390
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发表时间：
2006-05
影响因子：
4
通讯作者：
M. Cho;K. Chung;C. Whang;D. Ko;J. H. Lee;N. Lee
中科院分区：
文献类型：
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作者：
M. Cho;K. Chung;C. Whang;D. Ko;J. H. Lee;N. Lee
氮化HfO2薄膜的特性表明，Si从Si衬底到薄膜表面的扩散是由在NH3气氛中退火引起的，并且N的掺入与Si的扩散密切相关。氮化HfO2薄膜的N 1s峰的芯能级能态的变化表明，结合到薄膜中的N的量随着退火温度的升高而急剧增加，特别是在900°C以上的温度下。结合的N大部分结合到从Si衬底扩散到膜中的Si上，而在高退火温度下，一些N结合到HfO2上。在薄膜中产生了一些分子N2，其在额外的退火之后容易扩散出去。此外，与界面区域相比，膜中化学吸附的N不是完全稳定的：即，膜中的N在N2环境中额外退火之后主要从膜向外扩散。
The characteristics of nitrided HfO2 films suggest that the diffusion of Si from the Si substrate to the film surface is induced by annealing in an NH3 ambient and that the incorporation of N is closely related to the diffusion of Si. Changes in the core-level energy state of the N 1s peaks of nitrided HfO2 films indicate that the quantity of N incorporated into the film drastically increases with increasing annealing temperature, especially at temperatures over 900°C. The incorporated N is mostly bonded to Si that diffused from the Si substrate into the film, while some N is incorporated to HfO2 at high annealing temperature. Some molecular N2 is generated in the film, which is easily diffused out after additional annealing. Moreover, the chemisorbed N in the film is not completely stable, compared to that at the interfacial region: i.e., the N in the film predominantly out diffuses from the film after additional annealing in a N2 ambient.