Van der Waals interfacial reconstruction in monolayer transition-metal dichalcogenides and gold heterojunctions
Van der Waals interfacial reconstruction in monolayer transition-metal dichalcogenides and gold heterojunctions
复制标题
单层过渡金属二硫属化物和金异质结中的范德华界面重构
DOI：
10.1038/s41467-020-14753-8
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发表时间：
2020-02-21
影响因子：
16.6
通讯作者：
Chen, Mingwei
中科院分区：
文献类型：
--
作者：
Luo, Ruichun;Xu, Wen Wu;Chen, Mingwei
半导体二维过渡金属二硫属化物（2DMDs）与导电金属（如金）之间的货车德瓦耳斯（vdW）异质结的结构和性质对基于2DMDs的电子器件的性能有重要影响。化学气相沉积是大规模合成和制造具有自然形成的TMD/金属vdW界面的2D TMD电子器件的最有前途的方法之一。然而，vdW界面的结构和化学性质鲜为人知。在这里，我们报告的界面之间的重建TMD单分子膜和金基板。硫的参与导致了Au {001}表面的重构，形成了亚稳的Au 4S 4界面相，该界面相由顶层的MoS 2和WS 2单分子膜稳定。此外，增强的vdW之间的相互作用的重建Au 4S 4界面相和TMD单分子膜的结果从n型TMD-Au肖特基接触到p型的一个降低的能量势垒高度。
The structures and properties of van der Waals (vdW) heterojunctions between semiconducting two-dimensional transition-metal dichalcogenides (2D TMDs) and conductive metals, such as gold, significantly influence the performances of 2D-TMD based electronic devices. Chemical vapor deposition is one of the most promising approaches for large-scale synthesis and fabrication of 2D TMD electronics with naturally formed TMD/metal vdW interfaces. However, the structure and chemistry of the vdW interfaces are less known. Here we report the interfacial reconstruction between TMD monolayers and gold substrates. The participation of sulfur leads to the reconstruction of Au {001} surface with the formation of a metastable Au4S4interfacial phase which is stabilized by the top MoS2and WS2monolayers. Moreover, the enhanced vdW interaction between the reconstructed Au4S4interfacial phase and TMD monolayers results in the transition from n-type TMD-Au Schottky contact to p-type one with reduced energy barrier height.