Hidden quantum mirage by negative refraction in semiconductor P-N junctions
Hidden quantum mirage by negative refraction in semiconductor P-N junctions
复制标题
半导体 P-N 结中负折射隐藏的量子幻象
DOI：
10.1103/physrevb.94.085408
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发表时间：
2016-03
影响因子：
3.7
通讯作者：
Chang Kai
中科院分区：
文献类型：
--
作者：
Zhang Shu-Hui;Zhu Jia-Ji;Yang Wen;Lin Hai-Qing;Chang Kai
我们预测了一种新的量子干涉的基础上的负折射横跨半导体P-N结：与本地泵的一侧的结，本地探针的响应在另一侧的行为，如果扰动不是从泵，而是从它的镜像的结。这种现象通过系统的平移不变性和组成材料的费米表面的匹配来保证，因此它对结的其他细节（例如，结宽度、电势分布以及甚至无序）。最近在二维半导体中制造的P-N结提供了理想的平台来探索这种现象及其应用，以显着增强电荷和自旋输运以及载流子介导的长程相关。
We predict a novel quantum interference based on the negative refraction across a semiconductor P-N junction: with a local pump on one side of the junction, the response of a local probe on the other side behaves as if the disturbance emanates not from the pump but instead from its mirror image about the junction. This phenomenon is guaranteed by translational invariance of the system and matching of Fermi surfaces of the constituent materials, thus it is robust against other details of the junction (e.g., junction width, potential profile, and even disorder). The recently fabricated P-N junctions in 2D semiconductors provide ideal platforms to explore this phenomenon and its applications to dramatically enhance charge and spin transport as well as carrier-mediated long-range correlation.