Observation of the Fano-Kondo antiresonance in a quantum wire with a side-coupled quantum dot.
Observation of the Fano-Kondo antiresonance in a quantum wire with a side-coupled quantum dot.
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DOI：
10.1103/physrevlett.95.066801
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发表时间：
2004-10
影响因子：
8.6
通讯作者：
Masahiro Sato;H. Aikawa;K. Kobayashi;S. Katsumoto;Y. Iye
中科院分区：
文献类型：
--
作者：
Masahiro Sato;H. Aikawa;K. Kobayashi;S. Katsumoto;Y. Iye
我们在带有侧耦合量子点的量子线中观察到了Fano-Kondo反共振。在弱耦合区，由于Fano效应出现了下降。随着耦合强度的增加，在两个凹陷之间的区域的电导交替下降。从温度依赖性和对磁场的响应，我们得出结论，电导降低是由于Fano-Kondo反共振。在Fano参数q近似为0的Kondo谷处，当系统接近与Gerland等人的理论预测一致的幺正极限时，相移相对于栅极电压锁定为pi/2 [Phys.Rev.Lett. 84，3710（2000）]。
We have observed the Fano-Kondo antiresonance in a quantum wire with a side-coupled quantum dot. In a weak coupling regime, dips due to the Fano effect appeared. As the coupling strength increased, conductance in the regions between the dips decreased alternately. From the temperature dependence and the response to the magnetic field, we conclude that the conductance reduction is due to the Fano-Kondo antiresonance. At a Kondo valley with the Fano parameter q approximately 0, the phase shift is locked to pi/2 against the gate voltage when the system is close to the unitary limit in agreement with theoretical predictions by Gerland et al. [Phys. Rev. Lett. 84, 3710 (2000)].