Growth of nanowire superlattice structures for nanoscale photonics and electronics
Growth of nanowire superlattice structures for nanoscale photonics and electronics
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DOI：
10.1038/415617a
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发表时间：
2002-02-07
期刊：
影响因子：
64.8
通讯作者：
Lieber, CM
中科院分区：
文献类型：
--
作者：
Gudiksen, MS;Lauhon, LJ;Lieber, CM
将半导体纳米线和碳纳米管组装成纳米级器件和电路可以实现纳米电子学和光子学中的多种应用(1)。单个半导体纳米线已被配置为场效应晶体管 (2)、光电探测器 (3) 和生物/化学传感器 (4)。使用 n 型和 p 型半导体纳米线或纳米管已经实现了更复杂的发光二极管 (5) (LED) 以及互补和二极管逻辑 (6-8) 器件。 n 型和 p 型材料已通过交叉 p 型和 n 型纳米线 (2,5,6,9) 或通过光刻在纳米管 8,10 中定义不同的 p 型和 n 型区域而合并到后面的器件中，尽管这两种策略都限制了器件的复杂性。在平面半导体行业中，复杂的 n 型和 p 型以及更普遍的成分调制（即超晶格）结构用于实现多种电子和光子功能。在这里，我们演示了用 III-V 族和 IV 族材料合成半导体纳米线超晶格。 （通过在纳米线生长过程中重复调制气相半导体反应物，在纳米线内产生超晶格。）由 2 至 21 层 GaAs 和 GaP 组成的成分调制超晶格已经制备完成。此外，还合成了n-Si/p-Si和n-InP/p-InP调制掺杂纳米线。单纳米线光致发光、电传输和电致发光测量显示了这些纳米线超晶格独特的光子和电子特性，并提出了从纳米条形码到偏振纳米级 LED 的潜在应用。
The assembly of semiconductor nanowires and carbon nanotubes into nanoscale devices and circuits could enable diverse applications in nanoelectronics and photonics(1). Individual semiconducting nanowires have already been configured as field-effect transistors(2), photodetectors(3) and bio/chemical sensors(4). More sophisticated light-emitting diodes(5) (LEDs) and complementary and diode logic(6-8) devices have been realized using both n- and p-type semiconducting nanowires or nanotubes. The n- and p-type materials have been incorporated in these latter devices either by crossing p- and n-type nanowires(2,5,6,9) or by lithographically defining distinct p- and n-type regions in nanotubes 8,10, although both strategies limit device complexity. In the planar semiconductor industry, intricate n- and p-type and more generally compositionally modulated (that is, superlattice) structures are used to enable versatile electronic and photonic functions. Here we demonstrate the synthesis of semiconductor nanowire superlattices from group III-V and group IV materials. (The superlattices are created within the nanowires by repeated modulation of the vapour-phase semiconductor reactants during growth of the wires.) Compositionally modulated superlattices consisting of 2 to 21 layers of GaAs and GaP have been prepared. Furthermore, n-Si/p-Si and n-InP/p-InP modulation doped nanowires have been synthesized. Single-nanowire photoluminescence, electrical transport and electroluminescence measurements show the unique photonic and electronic properties of these nanowire superlattices, and suggest potential applications ranging from nano-barcodes to polarized nanoscale LEDs.