High-quality and high-purity homoepitaxial diamond (100) film growth under high oxygen concentration condition
High-quality and high-purity homoepitaxial diamond (100) film growth under high oxygen concentration condition
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DOI：
10.1063/1.4929962
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发表时间：
2015-09-21
影响因子：
3.2
通讯作者：
Teraji, Tokuyuki
中科院分区：
文献类型：
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作者：
Teraji, Tokuyuki
在高浓度（2%）的生长环境中同时加入氧气，可以有效地抑制金刚石同质外延生长过程中的缺陷形成。30 μ m厚的金刚石膜，表面粗糙度为100 Wcm（-3）。表面特征图案随生长厚度向同一方向移动，表明横向生长是主要的生长方式。所获得的同质外延金刚石（100）薄膜的高化学纯度（低于1 ppb的低氮浓度）和最高的C-12同位素比（99.998%）表明所提出的生长条件具有高的杂质控制能力。(C)2015 AIP Publishing LLC.
Defect formation during diamond homoepitaxial growth was sufficiently inhibited by adding oxygen simultaneously in the growth ambient with high concentration of 2%. A 30-mu m thick diamond films with surface roughness of 100 Wcm(-3). Surface characteristic patterns moved to an identical direction with growth thickness, indicating that lateral growth was dominant growth mode. High chemical purity represented by low nitrogen concentration of less than 1 ppb and the highest C-12 isotopic ratio of 99.998% of the obtained homoepitaxial diamond (100) films suggest that the proposed growth condition has high ability of impurity control. (C) 2015 AIP Publishing LLC.