Manipulation of native point defect behavior in rutile TiO 2 via surfaces and extended defects
Manipulation of native point defect behavior in rutile TiO 2 via surfaces and extended defects
复制标题
通过表面和扩展缺陷控制金红石 TiO 2 中的原生点缺陷行为
DOI：
10.1088/1361-648x/aa89ba
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
Seebauer, Edmund G
中科院分区：
文献类型：
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作者：
Gilliard, Kandis Leslie;Seebauer, Edmund G
半导体表面提供了与底层体交换原生点缺陷的有效途径。对于金红石TiO 2 (1 1 0)，氧的同位素自扩散研究表明，表面可能充当O i 的源，同时充当钛间隙Ti i 的汇。通过标记 Ti 和 O 的自扩散测量，目前的工作开发了涉及 O i 和 Ti i 的扩散反应网络的更完整图像，其中表面充当气相中可用元素的源和气相中不可用元素的汇。该图指出了扩展缺陷（例如片晶和晶体剪切面）作为 O i 和 Ti i 储库的重要性，根据具体条件充当这些物质的净源或汇。结果证明了即使在宏观金属氧化物晶体中，表面和扩展缺陷在调节点缺陷行为方面的综合作用，并指出了有意操纵该行为的具体策略。
Semiconductor surfaces offer efficient pathways for exchanging native point defects with the underlying bulk. For rutile TiO 2 (1 1 0), isotopic self-diffusion studies of oxygen have suggested that the surface may act as a source for O i while simultaneously acting as a sink for titanium interstitials Ti i. Through self-diffusion measurements with labeled Ti as well as O, the present work develops a more complete picture of the diffusion-reaction network involving O i and Ti i, complete with the surface acting as a source for whichever elements are available from the gas phase and a sink for elements that are not. The picture points to the importance of extended defects such as platelets and crystallographic shear planes as reservoirs of O i and Ti i, acting as net sources or sinks of these species depending upon specific conditions. The results exemplify the combined roles of surfaces and extended defects in regulating point defect behavior even in macroscopic metal oxide crystals, and point to specific strategies for manipulating that behavior intentionally.