Low-temperature spatially resolved micro-photoluminescence mapping in CdZnTe single crystals
Low-temperature spatially resolved micro-photoluminescence mapping in CdZnTe single crystals
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DOI：
10.1063/1.3603930
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发表时间：
2011-06
影响因子：
4
通讯作者：
Ge Yang;A. Bolotnikov;Yonggang Cui;G. Camarda;A. Hossain;K. Kim;R. Gul;R. James
中科院分区：
文献类型：
--
作者：
Ge Yang;A. Bolotnikov;Yonggang Cui;G. Camarda;A. Hossain;K. Kim;R. Gul;R. James
我们利用低温空间分辨显微光致发光映射技术，研究了CdZnTe（CZT）单晶中含有结构缺陷区域的光致发光和电子缺陷态的空间变化。施主束缚激子发射的光致发光映射揭示了一个意想不到的蓝移的CZT带隙在Te夹杂物，这表明，对于光学测量的局部应变场需要考虑精确计算Zn的组合物和附近的微尺度缺陷的能级。我们观察到，施主束缚激子峰和缺陷相关的D带的线宽在位错密度高的区域加宽;相反，施主-受主对峰变窄。
We utilized a low-temperature spatially resolved micro-photoluminescence mapping technique to investigate the spatial variation of photoluminescence- and electronic-defect states in areas of CdZnTe (CZT) single crystals containing structural-imperfections. Photoluminescence mapping of the donor-bound-exciton emission reveals an unexpected blue-shift of the CZT bandgap at Te inclusions, which indicates that for optical measurements the localized strain field needs to be considered for accurate calculation of Zn composition and energy levels near micro-scale defects. We observed that the line widths of the donor-bound-exciton peak and defect-related D band are broadened in regions with a high density of dislocations; in contrast, the donor-acceptor-pair peak is narrowed.