Photoemission intensities at the 3p threshold resonance of NiO and Ni
Photoemission intensities at the 3p threshold resonance of NiO and Ni
复制标题
NiO 和 Ni 3p 阈值共振处的光电发射强度
DOI:
10.1103/physrevb.27.2082
复制
发表时间:
1983
影响因子:
3.7
通讯作者:
Z. Hurych
中科院分区:
文献类型:
--
作者:
M. R. Thuler;R. Benbow;Z. Hurych
We report photoemission spectra and intensity profiles of the 3 d emission and the resonant valence-band satellites in NiO and Ni. Ni in Ni metal is in a 3 d 9 configuration, but Ni in NiO is in a 3 d 8 configuration. NiO gives an opportunity to study the effect of a larger number of holes in the d configuration: For NiO we find a very strong resonant satellite at 9.2 eV and a weak satellite at∼ 22 eV below the main 3 d peak. The intensity of the 9.2-eV satellite is about twice that of the 6.2-eV satellite in Ni, which reflects the increased number of empty 3 d states of NiO as compared with Ni. The intensity profile of the main 3 d emission in NiO shows a strong (30%) dip at the resonance threshold, the energy of which corresponds to the main absorption threshold as measured with the constant-final-energy spectroscopy technique and to the binding energy of the 3 p core levels as determined by x-ray photoelectron spectroscopy. Our interpretation is incomplete because of the clouded theoretical picture of NiO, but the results for Ni and NiO agree qualitatively with recent calculations indicating that similar processes are involved in both cases. The strong increase of 3 eV in the satellite-main line separation energy could be due to the strong localization of the 3 d electrons in NiO, which should lead to an increase in the effective Coulomb interaction.