Half-metallic exchange bias ferromagnetic/antiferromagnetic interfaces in transition-metal chalcogenides.
Half-metallic exchange bias ferromagnetic/antiferromagnetic interfaces in transition-metal chalcogenides.
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DOI：
10.1103/physrevlett.96.047206
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发表时间：
2006
影响因子：
8.6
通讯作者：
K. Nakamura;Y. Katō;T. Akiyama;T. Ito;A. Freeman
中科院分区：
文献类型：
--
作者：
K. Nakamura;Y. Katō;T. Akiyama;T. Ito;A. Freeman
为了研究半金属交换偏置界面，采用全势线性缀加平面波方法测定了锌-过渡金属硫族化合物铁磁/反铁磁界面以及补偿和未补偿的铁磁/反铁磁界面的磁结构.与未补偿的AFM界面，一个反平行的Cr和Mn的时刻的排列诱导一个优秀的半金属性。更引人注目的是，在补偿的AFM界面中，FM层中的Cr矩垂直于AFM层中的Mn矩，但Mn矩强烈地不能诱导净矩以保持半金属性。这些发现可能为具有100%自旋极化的交换偏置自旋电子器件提供关键成分，具有单向各向异性以控制和操纵纳米级的自旋。
To investigate half-metallic exchange bias interfaces, magnetic structures at ferromagnetic (FM)/antiferromagnetic (AFM) interfaces in the zinc blende transition-metal chalcogenides, and with compensated and uncompensated AFM interfaces, were determined by the full-potential linearized augmented plane-wave method. With the uncompensated AFM interface, an antiparallel alignment of the Cr and Mn moments induces an excellent half-metallicity. More striking still, in the compensated AFM interface the Cr moments in the FM layer lie perpendicular to the Mn moments in the AFM layer but the Mn moments strongly cant to induce a net moment so as to retain the half-metallicity. These findings may offer a key ingredient for exchange biased spintronic devices with 100% spin polarization, having a unidirectional anisotropy to control and manipulate spins at the nanoscale.