Cross-linking control during imprint for hybrid lithography
Cross-linking control during imprint for hybrid lithography
复制标题
混合光刻压印过程中的交联控制
DOI：
10.1116/1.4763357
复制
发表时间：
2012
影响因子：
1.4
通讯作者：
H. Scheer
中科院分区：
文献类型：
--
作者：
K. Dhima;C. Steinberg;S. Möllenbeck;A. Mayer;Simeng Wang;H. Scheer
将热纳米压印与光学光刻相结合的混合光刻是在大面积上制备具有不同几何形状（纳米、微米）的结构的有效手段，用于传感器应用。为了实现这一技术，光致抗蚀剂的适用性，这一进程进行了调查。在负性抗蚀剂的情况下，由于在分钟范围内的加热时间，通过曝光诱导或提供的交联可以在压印步骤中被放大。由于交联可能会阻碍压印，因此需要相对于所设想的压印温度对曝光剂量进行细微调整以成功处理。在压印温度为100 °C的情况下，可以使用两种市售负性抗蚀剂：ma-N 405和ARN 4410获得混合光刻的良好结果。后者可以成功地用于随后的发射。当抗蚀剂在压印步骤之前曝光时获得最佳结果。
Hybrid lithography combining thermal nanoimprint with optical lithography is an effective means to prepare structures with differing geometries (nanometer, micrometer) over large areas, e.g., for sensor applications. For the realization of this technique, the suitability of photoresists for this process has to be investigated. In case of negative tone resists, the cross-linking induced or provided by exposure may be amplified in the imprint step due to heating times in the minute range. As cross-linking may impede the imprint, a subtle adjustment of the exposure dose with respect to the imprint temperature envisaged is required for successful processing. With an imprint temperature of 100 °C, good results for hybrid lithography could be obtained with two commercially available negative tone resists: ma-N 405 and ARN 4410. The latter could successfully be used for a subsequent liftoff. The best results were obtained when the resists were exposed before the imprint step.