A study of transport properties in Cu and P doped ZnSb
A study of transport properties in Cu and P doped ZnSb
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DOI：
10.1063/1.4906404
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发表时间：
2015-01
影响因子：
3.2
通讯作者：
K. Valset;Xin Song;T. Finstad
中科院分区：
文献类型：
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作者：
K. Valset;Xin Song;T. Finstad
在样品中掺入铜和磷，并在798K下烧结，电输运性质被解释为受价带附近杂质带的影响。在较低的铜掺杂浓度下，随着塞贝克系数和有效质量的降低，该杂质带降低了热电性能。当载流子浓度大于1×1019 cm−3时，掺铜样品的塞贝克系数可用单一抛物线带描述。
ZnSb samples have been doped with copper and phosphorus and sintered at 798 K. Electronic transport properties are interpreted as being influenced by an impurity band close to the valence band. At low Cu dopant concentrations, this impurity band degrades the thermoelectric properties as the Seebeck coefficient and effective mass are reduced. At carrier concentrations above 1 × 1019 cm−3, the Seebeck coefficient in Cu doped samples can be described by a single parabolic band.