Grain-size distributions and grain boundaries of chalcopyrite-type thin films
Grain-size distributions and grain boundaries of chalcopyrite-type thin films
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黄铜矿型薄膜的晶粒尺寸分布和晶界
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发表时间：
2007
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通讯作者：
H. Schock
中科院分区：
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作者：
D. Abou‐Ras;S. Schorr;H. Schock
用电子背散射衍射法研究了完整太阳电池中的CuInSe_2、CuGaSe_2、Cu(In，Ga)Se_2和CuInS_2薄膜太阳吸收体的截面结构。从获得的数据中提取了晶粒度分布，并确定了最频繁的晶界。所研究的所有黄铜矿类型薄膜的粒度分布均可用对数正态分布函数很好地描述。这些薄膜中最常见的晶界类型是60°−〈221〉Tet和71°−〈110〉Tet(靠近Σ3孪晶界)。这些结果可以直接与黄铜矿型薄膜生长过程中{112}面的重要性有关。基于能量考虑，假设最频繁的孪晶边界呈现180°−〈221Tet星座。
CuInSe2, CuGaSe2, Cu(In,Ga)Se2 and CuInS2 thin-film solar absorbers in completed solar cells were studied in cross section by means of electron-backscatter diffraction. From the data acquired, grain-size distributions were extracted, and also the most frequent grain boundaries were determined. The grain-size distributions of all chalcopyrite-type thin films studied can be described well by lognormal distribution functions. The most frequent grain-boundary types in these thin films are 60°−〈221〉tet and 71°−〈110〉tet (near) Σ3 twin boundaries. These results can be related directly to the importance of {112}tet planes during the topotactical growth of chalcopyrite-type thin films. Based on energetic considerations, it is assumed that the most frequent twin boundaries exhibit a 180°−〈221〉tet constellation.