Preparation of Cu2ZnSnS4 thin films by sulfurization of stacked metallic layers
Preparation of Cu2ZnSnS4 thin films by sulfurization of stacked metallic layers
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DOI：
10.1016/j.tsf.2008.09.058
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发表时间：
2008-12-31
期刊：
影响因子：
2.1
通讯作者：
Takeuchi, Akiko
中科院分区：
文献类型：
--
作者：
Araki, Hideaki;Mikaduki, Aya;Takeuchi, Akiko
Cu的堆叠前体。用电子束蒸发法在玻璃/钼衬底上制备了Sr 1、Sr 2和Zn。采用衬底加热法依次蒸发Cu、Sr和Zn，制备了六种具有不同堆叠顺序的前驱体。将前体在560 ℃的温度下在N-2+硫蒸气的气氛中硫化2小时以制造用于太阳能电池的Cu 2 ZnSnS 4（CZTS）薄膜。硫化膜具有归因于CZTS的X射线衍射峰。用六种前驱体制备的CZTS薄膜制备了太阳能电池。结果，使用通过Mo/Zn/Cu/Sn前体的硫化制备的CZTS薄膜的太阳能电池表现出478 mV的开路电压、9.78mA/cm（2）的短路电流、0.38的填充因子和1.79%的转换效率。(c)2008 Elsevier B. V.保留所有权利。
Stacked precursors of Cu. Sri, and Zn were fabricated on glass/Mo substrates by electron beam evaporation. Six kinds of precursors with different stacking sequences were prepared by sequential evaporation of Cu, Sri, and Zn with substrate heating. The precursors were sulfurized at temperatures of 560 degrees C for 2 h in an atmosphere of N-2+sulfur vapor to fabricate Cu2ZnSnS4 (CZTS) thin films for solar cells. The sulfurized films exhibited X-ray diffraction peaks attributable to CZTS. Solar cells using CZTS thin films prepared from six kinds of precursors were fabricated. As a result, the solar cell using a CZTS thin film produced by sulfurization of the Mo/Zn/Cu/Sn precursor exhibited an open-circuit voltage of 478 mV, a short-circuit current of 9.78 mA/cm(2), a fill factor of 0.38, and a conversion efficiency of 1.79%. (c) 2008 Elsevier B.V. All rights reserved.