Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric.
Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric.
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DOI：
10.1038/srep06395
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发表时间：
2014-09-22
影响因子：
4.6
通讯作者：
Koide Y
中科院分区：
文献类型：
--
作者：
Liu J;Liao M;Imura M;Tanaka A;Iwai H;Koide Y
虽然已经在金刚石上沉积了几种高k绝缘体用于金属-绝缘体-半导体场效应晶体管（MISFET）的制造，但是k值和电流输出仍然不完全令人满意。在这里，我们提出了一个高k氧化锆层的金刚石MISFET。ZrO 2的k值由电容-电压特性确定为15.4。在-4.0 ~2.0 V栅压范围内，漏电流密度小于4.8 × 10−5 A·cm−2。 通过消除源/漏沟道间隙，获得了低导通电阻的MISFET，其表现出大电流输出和高非本征漏电流。高性能金刚石MISFET的制备将推动功率器件的发展。
Although several high-k insulators have been deposited on the diamond for metal-insulator-semiconductor field effect transistors (MISFETs) fabrication, the k values and current output are still not fully satisfactory. Here, we present a high-k ZrO2 layer on the diamond for the MISFETs. The k value for ZrO2 is determined by capacitance-voltage characteristic to be 15.4. The leakage current density is smaller than 4.8 × 10−5 A·cm−2 for the gate voltage ranging from −4.0 to 2.0 V. The low on-resistance MISFET is obtained by eliminating source/drain-channel interspaces, which shows a large current output and a high extrinsic transconductance. The high-performance diamond MISFET fabrication will push forward the development of power devices.