Simulation of a Ridge-Type Semiconductor Laser with Selective Double-sided Anti-guiding and Partially Undoped Cladding Layers
Simulation of a Ridge-Type Semiconductor Laser with Selective Double-sided Anti-guiding and Partially Undoped Cladding Layers
复制标题
具有选择性双面反导和部分不掺杂包层的脊型半导体激光器的仿真
DOI：
10.1007/s11082-014-0084-z
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发表时间：
2015
影响因子：
3
通讯作者：
Daiya Katsuragawa and Takahiro Numai
中科院分区：
文献类型：
--
作者：
Durga Prasad Sapkota;Madhu Sudan Kayastha;Koichi Wakita;Daiya Katsuragawa and Takahiro Numai
提出了一种具有选择性双面反导和部分未掺杂包层的脊型半导体激光器，并对其激光特性进行了数值模拟。随着选择性双面反导层的高度和宽度的增加，扭结能级和阈值电流都增加。随着部分未掺杂的包覆层的厚度的增加，扭结水平增加。对于部分未掺杂的包层的厚度存在最佳值，以在保持无扭结操作的情况下使阈值电流最小化。无扭结操作的最低阈值电流为46.1 mA，远低于之前的最低值57.0 mA。
A ridge-type semiconductor laser with selective double-sided anti-guiding and partially undoped cladding layers is proposed, and lasing characteristics are simulated. With increases in the height and width of the selective double-sided anti-guiding layers, both kink-level and threshold current increase. With an increase in the thickness of the partially undoped cladding layers, the kink-level increases. There is an optimum value for the thickness of the partially undoped cladding layers to minimize the threshold current with maintaining kink-free operation. The lowest threshold current for kink-free operation is 46.1 mA, which is much lower than the previous lowest value of 57.0 mA.