The recrystallization of commercially pure and doped tungsten wire drawn to high strain
The recrystallization of commercially pure and doped tungsten wire drawn to high strain
复制标题
高应变拉制商业纯和掺杂钨丝的再结晶
DOI：
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发表时间：
1979
期刊：
影响因子：
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通讯作者：
D. B. Snow
中科院分区：
文献类型：
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作者：
D. B. Snow
用光学显微镜和透射电子显微镜研究了未掺杂和掺杂钨丝在拉伸到7.7真应变后的再结晶过程。在两种材料中，高角度晶界迁移是在大致相同的温度下开始的，但在未掺杂的线材中进行得更快，因为没有钾气泡弥散，所以形成了更粗大、更等轴的晶界结构。在这两种情况下都没有观察到与(110)形变织构的变化。在较低的温度(1100~1200℃)下，未掺杂线材的再结晶以粗大的晶粒长大为更细小的组织为主。随着退火温度的升高，这一过程被普遍的晶粒粗化所取代，最终产生相对等轴化的再结晶组织。看来，可能是第二相分散抑制本身阻止了掺杂导线中类似的结构变化。
The recrystallization processes in both undoped and doped tungsten wire after drawing to a true strain of 7.7 were examined by light microscopy and transmission electron microscopy. High angle grain boundary migration commenced at approximately the same temperature in both materials, but proceeded much more rapidly in the undoped wire, where the absence of a potassium bubble dispersion allowed a coarser, more equiaxed grain structure to form. No change from the (110) deformation texture was observed in either case. Recrystallization in the undoped wire was dominated at lower temperatures (1100 to 1200°C) by the growth of large grains into a much finer structure. As the annealing temperature was increased, this process was replaced by a general grain coarsening which eventually produced a relatively equiaxed recrystallized grain structure. It appeared probable that it was the second phase dispersion inhibition alone that prevented similar structural changes in the doped wire.