Cross sectional analysis of the core of silicon microparticles formed via zinc reduction of SiCl4
Cross sectional analysis of the core of silicon microparticles formed via zinc reduction of SiCl4
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SiCl4 锌还原形成的硅微粒核心的横截面分析
DOI：
10.1039/c7ce00296c
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发表时间：
2017
期刊：
影响因子：
3.1
通讯作者：
Y. Tsuji and Y. Yamaguchi
中科院分区：
文献类型：
--
作者：
S. Inasawa;Y. Ono;T. Mizuguchi;A. Sunairi;S. Nakamura;Y. Tsuji and Y. Yamaguchi
通过用锌还原四氯化硅而形成硅微粒。这些微粒的化学蚀刻产生了具有独特沟槽结构的微粒，该结构显示出可见的光致发光。虽然我们之前报道过合成微粒内部径向发展的晶体结构，但它们的晶体结构尚不清楚。在这项研究中，我们使用透射电子显微镜直接观察微粒的横截面。我们揭示了微粒内部存在核心。核心显示出秩序良好的电子衍射图案，这很容易用五个单晶（每个单晶旋转 72°）来解释。我们还发现，在微粒中观察到的径向线和带是由位错引起的，主要沿着{111}平面。我们认为沿着这些径向位错的优先蚀刻是具有沟槽结构的微粒形成的根源。
Silicon microparticles were formed by reduction of silicon tetrachloride by zinc. Chemical etching of these microparticles produced microparticles with a unique trench structure that showed visible photoluminescence. While we have previously reported the radially developed crystalline structure inside the as-synthesized microparticles, their crystalline structure was not clearly understood. In this study, we directly observed the cross sections of microparticles using a transmission electron microscope. We revealed the existence of a core inside the microparticles. The core showed a well-ordered electron diffraction pattern, which was readily explained by five single crystals rotated by 72° each. We also found that the observed radial lines and bands in the microparticles were caused by dislocations, mainly along the {111} planes. We consider that preferential etching along these radial dislocations is the origin of the formation of microparticles with trench structures.