Diameter dependence of current–voltage characteristics of ultrasmall area AlSb–InAs resonant tunneling diodes with diameters down to 20 nm
Diameter dependence of current–voltage characteristics of ultrasmall area AlSb–InAs resonant tunneling diodes with diameters down to 20 nm
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直径小至 20 nm 的超小面积 AlSb-InAs 谐振隧道二极管的电流-电压特性的直径依赖性
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发表时间：
1997
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通讯作者：
M. Komuro
中科院分区：
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作者：
K. Nomoto;K. Taira;Toshi;I. Hase;H. Hiroshima;M. Komuro
研究了直径小于20 nm的超小面积AlSb-InAs共振隧穿二极管（RTD）的电流-电压特性I（V）。在室温下观察到所有二极管的共振隧穿峰。峰谷比随RTD直径的减小而减小。我们发现，从直径依赖的谷电流的减少是由于热激活的表面电流的谷电流的贡献。对于直径小于100 nm的RTD，我们在4 K下观察到零偏压附近的精细结构。它们可以归因于隧穿通过由RTD侧壁限制的零维状态。
We have studied the current–voltage characteristics I(V) of ultrasmall area AlSb–InAs resonant tunneling diodes (RTDs) with diameters down to 20 nm. Resonant tunneling peaks were observed for all the diodes at room temperature. The peak-to-valley ratio reduces with the decreasing diameter of the RTD. We found from the diameter dependence of the valley current that the reduction is due to a contribution of the thermally activated surface current to the valley current. For RTDs with diameters less than 100 nm, we observed fine structures around zero bias at 4 K. They can be attributed to tunneling through zero-dimensional states confined by a RTD sidewall.