Blue GaN-based vertical cavity surface emitting lasers by CW current injection at 77K
Blue GaN-based vertical cavity surface emitting lasers by CW current injection at 77K
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DOI：
10.1117/12.808644
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发表时间：
2009-02
期刊：
影响因子：
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通讯作者：
H. Kuo;S. W. Chen;T. Kao;C. Kao;J. Chen;T. Lu;S. C. Wang
中科院分区：
文献类型：
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作者：
H. Kuo;S. W. Chen;T. Kao;C. Kao;J. Chen;T. Lu;S. C. Wang
本文介绍了采用光抽运和电流注入技术的GaN基垂直腔面发射激光器的制备和性能特性。由于在整个结构中采用了高质量、高反射率的AlN/GaN DBR，因此在室温下观察到了光泵混合镜GaN基垂直腔面发射激光器的激射行为。由于光泵混合镜的GaN基VCSEL的优异结果，我们进一步证明了连续波电流注入的GaN基VCSEL在77 K下的激射行为。该激光器具有一个位于462 nm的主蓝色波长，线宽约为0.15 nm，阈值注入电流为1.4 mA。采用混合镜的GaN基垂直腔面发射激光器的发散角和偏振比分别为11.7°和80%。还测得了约7.5×10 ~（-2）的自发耦合效率。
In the paper, we describe the fabrication and performance characteristics of GaN-based vertical-cavity surface-emitting lasers (VCSELs) by optical pumping and current injection. According to the employment of high-quality and high-reflectivity AlN/GaN DBRs in the whole structure, the lasing action of optically pumped GaN-based VCSELs with hybrid mirrors has been observed at room temperature. Due to the excellent results of optically pumped GaN-based VCSELs with hybrid mirrors, we further demonstrated the lasing behavior of GaN-based VCSELs by continuous-wave current injection at 77 K. The laser has one dominated blue wavelength located at 462 nm with a linewidth of about 0.15 nm and the threshold injection current at 1.4 mA. The divergence angle and polarization ratio of the GaN-based VCSELs with hybrid mirrors are about 11.7° and 80%, respectively. A larger spontaneous coupling efficiency of about 7.5×10-2 was also measured.