Fabrication of Photonic Wire and Crystal Circuits in Silicon-on-Insulator Using 193-nm Optical Lithography
Fabrication of Photonic Wire and Crystal Circuits in Silicon-on-Insulator Using 193-nm Optical Lithography
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DOI：
10.1109/jlt.2009.2022282
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发表时间：
2009-09-15
影响因子：
4.7
通讯作者：
Baets, Roel
中科院分区：
文献类型：
--
作者：
Selvaraja, Shankar Kumar;Jaenen, Patrick;Baets, Roel
高折射率对比度绝缘体上硅技术实现了波长级紧凑光子电路。我们报道了利用互补金属氧化物半导体工艺技术在绝缘体上硅上制作光子电路。通过从248 nm的先进光学光刻切换到193 nm，结合改进的干法蚀刻，实现了工艺窗口、线性度和邻近效应的实质性改进。在此基础上，对光子线的传输损耗和弯曲损耗进行了表征。测量结果表明，500 nm的光子线的传播损耗为2.7 dB/cm，5 m半径的额外弯曲损耗为0.013 dB/90弯曲。通过本文，我们证明了高分辨率光刻和干法刻蚀工艺的光子集成电路的大规模生产的适用性。
High-index contrast silicon-on-insulator technology enables wavelength-scale compact photonic circuits. We report fabrication of photonic circuits in silicon-on-insulator using complementary metal-oxide-semiconductor processing technology. By switching from advanced optical lithography at 248 to 193 nm, combined with improved dry etching, a substantial improvement in process window, linearity, and proximity effect is achieved. With the developed fabrication process, propagation and bending loss of photonic wires were characterized. Measurements indicate a propagation loss of 2.7 dB/cm for 500-nm photonic wire and an excess bending loss of 0.013 dB/90 bend of 5-m radius. Through this paper, we demonstrate the suitability of high resolution optical lithography and dry etch processes for mass production of photonic integrated circuits.