Single electron transistors with Nb/AlOx/Nb junctions
Single electron transistors with Nb/AlOx/Nb junctions
复制标题
具有 Nb/AlOx/Nb 结的单电子晶体管
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
J. Niemeyer
中科院分区：
文献类型：
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作者：
R. Dolata;H. Scherer;A. Zorin;J. Niemeyer
采用耐热聚合物聚醚砜和锗组成的模板掩模，采用电子束枪影蒸发技术制备了深亚微米Nb/AlOx/Nb隧道结和单电子晶体管。由于单库珀对和准粒子的隧穿，单电子晶体管的I(U)特性表现出特殊的特征。在超导态和正常态都观察到了显著的e-周期栅调制，并获得了高达Δ-1 meV的能隙能≈。讨论了难熔金属Nb与阴影蒸发技术相结合的特点。
Deep submicron Nb/AlOx/Nb tunnel junctions and single electron transistors were fabricated by electron beam gun shadow evaporation, using stencil masks consisting of the thermostable polymer polyethersulfone and germanium. The I(U) characteristics of the single electron transistors show special features due to the tunneling of single Cooper pairs and quasiparticles. Significant e-periodic gate modulation is observed in both the superconducting and the normal state and a gap energy Δeff of up to ≈1 meV has been achieved. The special features of using the refractory metal Nb in combination with the shadow evaporation technique are discussed.